The etching rate of the silicon wall may be not the same as that of the silicon substrate under this Abemaciclib porous layer because of the different circumstance. To achieve the etching rate of the silicon substrate, i.e., the formation rate of the SiNWs, the samples were etched for a longer duration while keeping the other conditions the same as in the previously mentioned case wherein the etching was carried out for 10 min. Supposing a linear relationship between the SiNW height and the etching duration , the etching rate can be calculated by comparing the heights
of the SiNWs with those etched for 10 min; the results are shown in Figure 6. Clearly, a high etching rate (>250 nm/min) was obtained in the present conditions, and the etching rate increases with TSA HDAC order increasing thickness of the Au film. The etching was also performed at a solution temperature of 28°C. The same trend was observed with a higher etching rate of over 400 nm/min. Figure 5 SEM images of the SiNW arrays catalyzed using the Au mesh with different thickness. Cross-sectional (a, b, c) and the corresponding plan-view (d, e, f) SEM images of the vertically aligned
SiNW arrays catalyzed using the Au mesh with thicknesses of 15, 30, and 45 nm, respectively, for 10 min at 22°C. For the SEM observation, the samples were tilted by 15°. Figure 6 Relationship of the thickness of the Au film and the etching rate of the Si substrate. Mechanism for difference in the etching rate The result above GNS-1480 mw is the first to cite the difference in the silicon etching rate induced using a Au film with different thicknesses. The exact mechanism is not clear at the moment. The etching rate might
be controlled by the mass transfer process of the reagent and the by-product [13, 14]. A short diffusion path facilitating the rapid mass transfer of the reagent and the by-product is expected to result in a high etching rate. Figure 7a schematically illustrates the possible diffusion paths of the reagent and the by-product in the Si GBA3 etching process. In path I, the reagent and the by-product diffuse along the interface between the Au film and the Si, which signifies that the etching rate decreases with the increase in the lateral size of the Au catalyst because of the long lateral diffusion distance. In path II, the Si atoms underneath the Au are dissolved in the Au and then diffuse through the Au film to the Au/solution interface where the silicon atoms are oxidized and etched away [14, 20]. On one hand, if the etching rate is dominated by the mass transfer through path I during the chemical etching, a thick Au mesh should lead to a low etching rate because of the increasing lateral size of the Au catalyst caused by the shrinking of the holes induced by the closure effect (see Figure 2).